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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p3 Reduction of Dislocations in the Bulk Growth of SiC Crystals
  Authors: Daisuke Nakamura
• p9 The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals   [ 561 K ]
  Authors: H. J. Rost, M. Schmidbauer, D. Siche
• p15 Fundamental Limitations of SiC PVT Growth Reactors with Cylindrical Heaters   [ 378 K ]
  Authors: Roman Drachev, E. Deyneka, C. Rhodes, J. Schupp, Tangali S. Sudarshan
• p21 Halide-CVD Growth of Bulk SiC Crystals   [ 1 M ]
  Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh
• p27 Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC   [ 1 M ]
  Authors: Saurav Nigam, Hun Jae Chung, Sung Wook Huh, J.R. Grim, A.Y. Polyakov, Mark A. Fanton, B.E. Weiland, David W. Snyder, Marek Skowronski
• p31 Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates   [ 241 K ]
  Authors: Jason R. Jenny, D.P. Malta, V.T. Tsvetkov, Mrinal K. Das, H. McD. Hobgood, Calvin H. Carter Jr.
• p35 Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds   [ 906 K ]
  Authors: Tomoaki Furusho, Ryota Kobayashi, Taro Nishiguchi, M. Sasaki, K. Hirai, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi
• p39 Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)   [ 2 M ]
  Authors: C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, Cengiz M. Balkas
• p43 Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals   [ 550 K ]
  Authors: A. Gupta, E. Semenas, Ejiro Emorhokpor, J. Chen, Ilya Zwieback, Andrew E. Souzis, Thomas Anderson
• p47 Growth of SiC Boules with Low Boron Concentration   [ 37 K ]
  Authors: Mark A. Fanton, R.L. Cavalero, R.G Ray, B.E. Weiland, W.J. Everson, David W. Snyder, Rick D. Gamble, Ed Oslosky